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2026、2026年度の設備投資（2026年）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.tel.com/ir/library/report/pjuomj00000000tf-att/fy26q4transcript-e.pdf","sourceType":"official_ir_material","sourceRole":"primary_reference","title":"東京エレクトロン：2026年3月期決算の質疑録、2026〜27年のWFE（2026年4月）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"東京エレクトロン：2026年3月期決算の質疑録、2026〜27年のWFE（2026年4月）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.intel.com/content/www/us/en/newsroom/news/corporate/ohio-one-construction-timeline-update.html","sourceType":"official_press_release","sourceRole":"primary_reference","title":"Intel：オハイオ工場の工期の見直し","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"Intel：オハイオ工場の工期の見直し。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.intc.com/news-events/press-releases/detail/1521/intel-announces-next-us-site-with-landmark-investment-in","sourceType":"official_press_release","sourceRole":"primary_reference","title":"Intel：オハイオ工場の発表（2022年1月）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"Intel：オハイオ工場の発表（2022年1月）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.intc.com/news-events/press-releases/detail/1532/intel-announces-initial-investment-of-more-than-33","sourceType":"official_press_release","sourceRole":"primary_reference","title":"Intel：マクデブルク工場の初期投資の発表（2022年3月）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"Intel：マクデブルク工場の初期投資の発表（2022年3月）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.semi.org/en/semi-press-release/semi-projects-double-digit-growth-in-global-300mm-fab-equipment-spending-for-2026-and-2027","sourceType":"official_press_release","sourceRole":"primary_reference","title":"SEMI：300mm工場の装置投資、2026・2027年に2桁成長（2026年4月）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"SEMI：300mm工場の装置投資、2026・2027年に2桁成長（2026年4月）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.semi.org/en/semi-press-release/semi-reports-global-300mm-fab-equipment-spending-expected-to-total-374-billion-dollars-over-next-three-years","sourceType":"official_press_release","sourceRole":"primary_reference","title":"SEMI：300mm工場の装置投資、3年間で3,740億ドル（2025年10月）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"SEMI：300mm工場の装置投資、3年間で3,740億ドル（2025年10月）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.semi.org/en/semi-press-release/global-300mm-fab-equipment-spending-to-reach-227-billion-in-2029-as-buildout-accelerates-semi-projects","sourceType":"official_press_release","sourceRole":"primary_reference","title":"SEMI：300mm工場の装置投資は2029年に2,270億ドル（2026年10月）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"SEMI：300mm工場の装置投資は2029年に2,270億ドル（2026年10月）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.semi.org/en/semi-press-release/global-semiconductor-equipment-sales-forecast-to-reach-a-record-229-billion-dollars-in-2028-semi-reports","sourceType":"official_press_release","sourceRole":"primary_reference","title":"SEMI：装置の売上は2028年に2,295億ドル（2026年7月）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"SEMI：装置の売上は2028年に2,295億ドル（2026年7月）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://d1io3yog0oux5.cloudfront.net/_3ccf9cf30376bf77bbb27f582e51d00d/intel/db/887/9266/prepared_remarks/Q2+2026+Prepared+Remarks.pdf","sourceType":"official_technology_article","sourceRole":"primary_reference","title":"Intel：2026年第2四半期決算の経営陣コメント、設備投資（2026年7月）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"Intel：2026年第2四半期決算の経営陣コメント、設備投資（2026年7月）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://micron.gcs-web.com/static-files/1a8d6c22-3b89-4806-930c-d30cbcd270d5","sourceType":"official_technology_article","sourceRole":"primary_reference","title":"Micron：決算資料、HBM3EとDDR5のウェーハ消費の比較","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"Micron：決算資料、HBM3EとDDR5のウェーハ消費の比較。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.semi.org/en/products-services/market-data/300mm-fab-outlook","sourceType":"official_technology_article","sourceRole":"primary_reference","title":"SEMI：300mm Fab Outlook、生産能力の伸び（2026年6月）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"SEMI：300mm Fab Outlook、生産能力の伸び（2026年6月）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.semi.org/en/products-services/market-data/world-fab-forecast","sourceType":"official_technology_article","sourceRole":"primary_reference","title":"SEMI：World Fab Forecast、装置投資と生産能力の見通し・収録施設数（2026年10月閲覧）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"SEMI：World Fab Forecast、装置投資と生産能力の見通し・収録施設数（2026年10月閲覧）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.semi.org/sites/semi.org/files/2025-09/MIT%20Webinar%20%28Sep%2023%202025%29_Christian%20Dieseldorff.pdf","sourceType":"official_technology_article","sourceRole":"primary_reference","title":"SEMI：工場予測レポートの数え方、ウェビナー資料（2025年9月）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"SEMI：工場予測レポートの数え方、ウェビナー資料（2025年9月）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://mis-prod-koce-homepage-cdn-01-blob-ep.azureedge.net/web/attach/13571040283022005.pdf","sourceType":"official_technology_article","sourceRole":"primary_reference","title":"SK hynix：2026年の設備投資と増産の計画（2026年）","publishedAt":null,"retrievedAt":"2026-10-19T08:51:58.976181+00:00","evidenceSummary":"SK hynix：2026年の設備投資と増産の計画（2026年）。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"}],"entityLinks":[]},{"technicalArticleId":"8799ff4c-1823-4943-a1f7-6677f515fd80","canonicalId":null,"slug":"film-stress-origins","canonicalPath":"/front-end/film-stress-origins/","title":"膜応力の由来｜熱膨張差・膜の育ち方・成膜後の変化","articleGenreKey":"process_technology_explainer","primaryCompany":{"canonicalId":null,"id":null,"name":null},"primaryEquipmentFamily":{"canonicalId":null,"id":null,"name":null},"primaryProcessKey":null,"articleStatus":"published","publicReviewStatus":"approved","confidenceScore":0.9,"publishedAt":"2026-10-16T23:37:33.727Z","updatedAt":"2026-10-16T23:37:33.727Z","sourceCount":12,"entityCount":2,"tags":["process_technology_explainer"],"sourceLinks":[{"url":"https://doi.org/10.1063/1.90905","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Physics Letters：EerNisse「成長中の熱酸化膜の応力」（1979年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**膨らむと圧縮になる。** シリコンを酸化して作る熱酸化膜は、シリコンより体積が大きい。EerNisseは1979年に、湿式酸化で成長中の熱酸化膜が、950℃以下では約7×10⁹dyn/cm²（約0.7GPa）の圧縮応力を持ち、975℃と1000℃では応力なしで育つことを測った。酸化膜が粘り気のある液体のように流れ始める温度（粘性流動点）が950〜975℃の間にあり、高温では膨らんだ分が流れて逃げると解釈されている。PECVDの窒化シリコンでも、高周波の電力を上げると窒素の結合が増え、膜が膨らんで圧縮応力が増える。この圧縮が元の引張を打ち消し、13.56MHzで電力を最大600Wまで上げた条件では、残留応力が0〜20MPaまで下がった。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1063/1.113907","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Physics Letters：銅（Mg）薄膜の熱サイクルと応力（1995年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"ただし膜は、いつまでも弾性的に応力をため込むわけではない。酸化したシリコン基板上の銅膜を室温から500℃まで加熱して測った1995年の研究では、純銅の応力は約200℃から温度に比例しなくなった。1回目の加熱を終えたMg入り（2〜3 at%）の銅は約400℃まで比例を保ち、Mgで膜の強度が上がったと報告されている。比例から外れるのは、膜が弾性の範囲を超えて変形し始めたことを示す。熱応力は、膜が変形せずに耐えられる範囲までしか積み上がらない。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.3390/coatings15060708","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Coatings：紫外線硬化による窒化シリコン膜の引張応力（2025年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**水素が抜けると縮んで引張になる。** プラズマCVD（PECVD）の窒化シリコン膜は、原料ガス由来の水素を多く含む。2025年の研究では、紫外線を当てるとN–HとSi–Hの結合が切れて水素が抜け、Si–N–Siの架橋が増えて、引張応力が最適な照射時間で約1,570MPaに安定した。紫外線の電力を上げすぎると、逆に応力は下がった。引張の窒化シリコン膜は、トランジスタのチャネルを引っ張る応力ライナーに使われる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.mrsec.harvard.edu/education/ap298r2004/Vlassak%20AP298presentation.pdf","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Harvard MRSEC：Vlassak「Thin Film Mechanics」講義資料（2004年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"成膜温度から室温へ冷やすと、膜と基板はそれぞれ自分の熱膨張係数に従って縮もうとする。基板のほうがずっと厚いので、膜は基板の縮み方に合わせさせられる。このずれが熱応力で、大きさは膜の2軸弾性率×熱膨張係数の差×温度差で見積もれる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1116/1.1312732","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"JVST：Thornton「スパッタ厚膜の組織と成膜条件」（1974年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"どの機構が勝つかは、成膜条件で決まる。スパッタ膜をまとめたWindischmannのレビューは、すき間の多い膜では引張、緻密な膜では原子ピーニングによる圧縮になり、決め手は膜に当たる粒子の量とエネルギーだとする。Thorntonは1974年に、厚いスパッタ膜でAr圧と基板温度を変えると組織が3つのゾーンに沿って変わり、低圧では密な繊維状の粒になることを示した。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1557/jmr.1999.0468","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Journal of Materials Research：Nix・Clemens「結晶粒の合体による引張応力」（1999年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**島がつながると引張になる。** 金属の膜の多くは、最初に小さな島として基板に付き、島が大きくなって互いに触れる。触れた島どうしは、側面のすき間をファスナーのように閉じてつながる。表面を減らしたほうがエネルギーが下がるからだ。閉じる分だけ島は互いに引き寄せられるが、底は基板に止められているので、膜は引き伸ばされた状態で固まる。NixとClemensは1999年に、この結晶粒の合体で大きな引張応力が生まれることを、表面と粒界のエネルギーと弾性率から見積もった。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1364/oic.1992.ofa2","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Optical Interference Coatings：Windischmann「スパッタ薄膜の内部応力」（1992年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"どの機構が勝つかは、成膜条件で決まる。スパッタ膜をまとめたWindischmannのレビューは、すき間の多い膜では引張、緻密な膜では原子ピーニングによる圧縮になり、決め手は膜に当たる粒子の量とエネルギーだとする。Thorntonは1974年に、厚いスパッタ膜でAr圧と基板温度を変えると組織が3つのゾーンに沿って変わり、低圧では密な繊維状の粒になることを示した。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1103/physrevlett.88.156103","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Physical Review Letters：Chasonら「多結晶薄膜の圧縮残留応力の起源」（2002年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**粒界に原子が入り込むと圧縮になる。** 膜がつながった後も成膜を続けると、原子の動きやすい金属膜などでは応力が圧縮側へ動く。Chasonらは2002年に、飛んできた原子が表面の化学ポテンシャルを上げ、その差に押されて原子が結晶粒の境目（粒界）へ流れ込み、圧縮応力を作るというモデルを示した。すでに詰まった場所へ原子を押し込むので、膜は本来より詰まった状態になる。このモデルは、成膜を止めると応力が緩む現象や、成膜速度で応力が変わることも説明した。そのため、同じ材料でも成膜速度を変えれば、圧縮の大きさを動かせる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1117/12.696350","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"SPIE：MEMS用の低応力窒化シリコン膜（2006年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**膨らむと圧縮になる。** シリコンを酸化して作る熱酸化膜は、シリコンより体積が大きい。EerNisseは1979年に、湿式酸化で成長中の熱酸化膜が、950℃以下では約7×10⁹dyn/cm²（約0.7GPa）の圧縮応力を持ち、975℃と1000℃では応力なしで育つことを測った。酸化膜が粘り気のある液体のように流れ始める温度（粘性流動点）が950〜975℃の間にあり、高温では膨らんだ分が流れて逃げると解釈されている。PECVDの窒化シリコンでも、高周波の電力を上げると窒素の結合が増え、膜が膨らんで圧縮応力が増える。この圧縮が元の引張を打ち消し、13.56MHzで電力を最大600Wまで上げた条件では、残留応力が0〜20MPaまで下がった。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1117/12.2661307","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"SPIE：TiNマスクのプラズマ誘起応力とウィグリング（2023年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**プラズマに当たると圧縮側へ動く。** 配線工程のTiNマスクは、エッチングのプラズマに当たるとすべての膜で圧縮側へ応力が動いた。成膜時に＋0.1GPaだった膜でも、プラズマ後はウィグリングを起こすほど圧縮側へ寄った。成膜後の工程も、膜の応力を書き換える。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1016/0040-6090%2893%2990201-y","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Thin Solid Films：Davis「イオン衝撃による圧縮応力の簡単なモデル」（1993年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**高エネルギーの粒子が詰め込むと圧縮になる。** スパッタでは、ターゲットからはね返ったガス原子や、勢いのある膜の原子が表面を叩く。叩かれた原子は、本来は入らない隙間へ押し込まれる。これを原子ピーニング（ピーニングは「叩いて締める」の意味）と呼び、Davisは1993年にイオンの衝突で圧縮応力ができる簡単なモデルを示した。そのため、スパッタではガス圧や電力、基板バイアスで粒子の勢いを変えると、圧縮応力の大きさが変わる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://orist.jp/technicalsheet/24-27.pdf","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"大阪産業技術研究所：テクニカルシート No.24-27 薄膜応力測定装置","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"実測でもこの通りになる。大阪産業技術研究所のTa膜では、成膜時の圧力を上げると応力が−1,200MPaから＋1,000MPaへ、スパッタ電力を上げると＋150MPaから−180MPaへ変わった。このテクニカルシートは、雰囲気中のArなどとの衝突がスパッタ粒子のエネルギーを大きく増減させ、エネルギーの高い粒子による膜の緻密化が強い圧縮応力の原因だとしている。圧力が低く電力が高いほど、粒子は勢いを保って膜を叩き、圧縮側へ寄る。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"}],"entityLinks":[{"entityType":"technology_topic","entityId":"deposition-ald","label":"成膜","relationRole":"primary_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"interconnect-beol","label":"配線形成","relationRole":"related_topic","confidenceScore":0.95}]},{"technicalArticleId":"14afbbc1-ff5f-4482-b286-bc9ef18ac9ce","canonicalId":null,"slug":"film-stress-and-youngs-modulus","canonicalPath":"/front-end/film-stress-and-youngs-modulus/","title":"膜応力とヤング率の基礎｜単位と符号、ウェハの反りまで","articleGenreKey":"process_technology_explainer","primaryCompany":{"canonicalId":null,"id":null,"name":null},"primaryEquipmentFamily":{"canonicalId":null,"id":null,"name":null},"primaryProcessKey":null,"articleStatus":"published","publicReviewStatus":"approved","confidenceScore":0.9,"publishedAt":"2026-10-16T07:14:33.654Z","updatedAt":"2026-10-16T23:37:33.727Z","sourceCount":10,"entityCount":2,"tags":["process_technology_explainer"],"sourceLinks":[{"url":"https://doi.org/10.1063/1.2805774","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Physics Letters：多孔質誘電体の線の波打ちの力学解析（2007年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"例に挙げた数値の出典は、TiNがスパッタ膜で報告された最大値の約445GPa、WdCがW添加炭素膜の最大値125GPa、多孔質low-kがウィグリングを調べたCEA-Letiの研究の条件だ。基板のシリコンのようにヤング率が向きで変わる材料もあり、シリコンでは結晶方向によって最大45%違う。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.2174/9789815179279123030011","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Bentham：TiN膜の構造と機械特性（2023年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"例に挙げた数値の出典は、TiNがスパッタ膜で報告された最大値の約445GPa、WdCがW添加炭素膜の最大値125GPa、多孔質low-kがウィグリングを調べたCEA-Letiの研究の条件だ。基板のシリコンのようにヤング率が向きで変わる材料もあり、シリコンでは結晶方向によって最大45%違う。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.mrsec.harvard.edu/education/ap298r2004/Vlassak%20AP298presentation.pdf","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Harvard MRSEC：Vlassak「Thin Film Mechanics」講義資料（2004年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"膜は縦横どちらの方向にも同じように基板に止められているので、応力は面内の2方向にかかる。このため膜の計算では、ヤング率Eの代わりにE÷(1−ν)という「2軸弾性率」を使うことが多い。νはポアソン比で、1方向に引っ張ったときに横がどれだけ縮むかを表す、単位のない数だ。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1109/JMEMS.2009.2039697","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"JMEMS：Hopcroftら「シリコンのヤング率はいくつか」（2010年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"例に挙げた数値の出典は、TiNがスパッタ膜で報告された最大値の約445GPa、WdCがW添加炭素膜の最大値125GPa、多孔質low-kがウィグリングを調べたCEA-Letiの研究の条件だ。基板のシリコンのようにヤング率が向きで変わる材料もあり、シリコンでは結晶方向によって最大45%違う。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1557/JMR.1992.1564","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Journal of Materials Research：Oliver・Pharr「押し込み試験による硬さとヤング率の測定」（1992年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"硬さは、ダイヤモンドの針を膜に押し込む試験（ナノインデンテーション）で測る。針を押す最大の力を、そのとき針が膜に接している面積（真上から見た面積）で割った値で、単位はやはりPaになる。同じ試験で、針を抜くときの戻り方（除荷の傾き）から、ヤング率に近い換算弾性率も求められる。この方法はOliverとPharrが1992年にまとめたもので、膜の評価で広く使われている。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1364/oic.1992.ofa2","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Optical Interference Coatings：Windischmann「スパッタ薄膜の内部応力」（1992年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**内部応力**（成長応力）は、膜の育ち方から生まれる。スパッタ膜の研究をまとめたWindischmannのレビューによると、エネルギーの高い粒子が当たって原子が詰め込まれる緻密な膜では圧縮応力になる。これを原子ピーニングと呼ぶ。逆に、すき間の多い膜では、結晶粒どうしが引き寄せ合って引張応力になる。どちらになるかは、膜に当たる粒子の量とエネルギーで決まる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1098/rspa.1909.0021","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Proc. Royal Society A：Stoney「電解析出した金属膜の張力」（1909年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"成膜の前後でウェハの曲がり具合（曲率半径R）を測り、その差から応力を求める。使うのはStoney（1909年）の式に基板の2軸弾性率の補正を加えた形で、膜応力＝基板のヤング率×基板の厚さの2乗÷(6×(1−基板のポアソン比)×膜の厚さ)×(1÷成膜後の曲率半径−1÷成膜前の曲率半径)という形をしている。曲率は膜側がへこむ向きを正とする。圧縮応力の膜は膜側が出っ張るので括弧内が負になり、応力も負で出る。成膜前のウェハにも固有の反りがあるので、前後の両方を測るのが前提になる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1117/12.2661307","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"SPIE：TiNマスクのプラズマ誘起応力とウィグリング（2023年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"| 量 | 意味 | 単位 | 半導体の例 |\r\n|---|---|---|---|\r\n| 応力 σ | 面積あたりの力 | Pa＝N/m²（MPa、GPa） | TiN膜で−3.6〜＋0.2GPa |\r\n| ひずみ ε | 伸び÷元の長さ | なし（%） | 応力の大きさ2GPaのTiNで約0.45% |\r\n| ヤング率 E | 応力÷ひずみ | Pa（GPa） | TiN約445GPa、WdC最大125GPa、多孔質low-k 2GPa未満 |","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1016/j.tsf.2025.140848","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Thin Solid Films：WdC膜の構造とエッチング耐性（2026年1月巻号）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"例に挙げた数値の出典は、TiNがスパッタ膜で報告された最大値の約445GPa、WdCがW添加炭素膜の最大値125GPa、多孔質low-kがウィグリングを調べたCEA-Letiの研究の条件だ。基板のシリコンのようにヤング率が向きで変わる材料もあり、シリコンでは結晶方向によって最大45%違う。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://orist.jp/technicalsheet/24-27.pdf","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"大阪産業技術研究所：テクニカルシート No.24-27 薄膜応力測定装置","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"名前は「膜が置かれた状態」を表し、「膜がしたいこと」はその逆になる。ばねで考えると分かりやすい。押し縮めたばね（圧縮）は外へ伸びようとし、引き伸ばしたばね（引張）は内へ縮もうとする。圧縮応力の膜が伸びようとし、引張応力の膜が縮もうとするのは、このためだ。大阪産業技術研究所のテクニカルシートも、圧縮を−、引張を＋で表している。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"}],"entityLinks":[{"entityType":"technology_topic","entityId":"deposition-ald","label":"成膜","relationRole":"primary_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"interconnect-beol","label":"配線形成","relationRole":"related_topic","confidenceScore":0.95}]},{"technicalArticleId":"038e4e68-9b1e-4ca1-b40f-d763b1d844ce","canonicalId":null,"slug":"line-wiggling","canonicalPath":"/front-end/line-wiggling/","title":"ウィグリングの座屈モデル｜TiNとWdCのマスク応力","articleGenreKey":"process_technology_explainer","primaryCompany":{"canonicalId":null,"id":null,"name":null},"primaryEquipmentFamily":{"canonicalId":null,"id":null,"name":null},"primaryProcessKey":null,"articleStatus":"published","publicReviewStatus":"approved","confidenceScore":0.9,"publishedAt":"2026-10-16T04:54:49.226Z","updatedAt":"2026-10-16T23:37:33.727Z","sourceCount":16,"entityCount":3,"tags":["process_technology_explainer"],"sourceLinks":[{"url":"https://www2.avs.org/symposium2011/Papers/Paper_PS-TuM2.html","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"AVS 2011：TiNマスクのウィグリング発生とエッチング時間（Lam Research）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"同じグループの2014年の研究は、有限要素法で座屈の起こりやすさを計算し、TiNの応力と厚さ、線の幅と高さ、材料のヤング率が効くことを実験と照合した。Lam ResearchのDelgadinoも2011年のAVSで、エネルギーの釣り合いからウィグリングの発生条件を予測するモデルを示し、ピッチが狭いほど低い縦横比でウィグリングが始まると報告した。同じ発表は、加工の最後に条件を満たしていても、エッチングの途中で一度波打って形が崩れることがあると指摘している。そのため、加工後の断面だけでウィグリングの有無を判断すると見逃す。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/WO2018144198A1/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：W・B・Cハードマスク特許（2017年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**理由1：伸びようとする力をゼロにしたり、縮もうとする力に変えたりできる。** TiNは成膜時に応力を下げても、前の節のとおりエッチングのプラズマで圧縮側へ戻る。W系の炭素膜は、成膜条件で応力を動かせる。WdCにホウ素を加えたW・B・C系マスクについて、Appliedの特許は、膜全体の応力が−0.1GPaから＋1GPaの範囲に入るとし、RFバイアスと350kHzの低周波電力で調整する方法を示す。TiNの問題は、膜が圧縮応力（−）の状態に置かれ、押し縮められたばねのように伸びようとすることだった。W系の炭素膜を成膜条件で引張応力（＋）の側に置くと、膜は逆に引き伸ばされたばねの状態になり、縮もうとする。縮もうとする膜は、線を両端からぴんと張った糸のようにまっすぐ引く。押す力が生まれないので、そもそも座屈が起きない。プラズマで多少圧縮側へ動いても、出発点が引張側にあれば限界まで余裕が残る。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US9624577B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：金属ドープドカーボン膜の成膜特許（2014年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"CVDの非晶質炭素膜では、膜の緻密さ（押し込み硬さ）と圧縮応力が引き換えになる。Applied Materialsの2014年優先日の特許は、炭素膜の炭素と水素の比を上げて緻密にすると圧縮応力が大きくなり、20nm以下の線が曲がったり切れたりすると書く。そこで炭素にWを入れ、選択比を上げてマスクを薄くし、ウィグリングと線の曲がりを避ける、というのがこの特許の狙いだった。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1063/1.2805774","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Physics Letters：多孔質誘電体の線の波打ちの力学解析（2007年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"CEA-Letiと仏CNRSのグループは2007年に、この壁の波打ちを座屈で説明した。波打ちが出たのは、マスクの応力が−2GPaよりマイナス側（圧縮2GPa超）で、low-kのヤング率が2GPaを下回り、壁の高さが230nmを超える条件だった。マスクに蓄えられたひずみエネルギーが、壁が曲がることで解放される。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1063/1.4882080","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Physics Letters：金属マスクによる多孔質low-kのウィグリング予測（2014年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"同じグループの2014年の研究は、有限要素法で座屈の起こりやすさを計算し、TiNの応力と厚さ、線の幅と高さ、材料のヤング率が効くことを実験と照合した。Lam ResearchのDelgadinoも2011年のAVSで、エネルギーの釣り合いからウィグリングの発生条件を予測するモデルを示し、ピッチが狭いほど低い縦横比でウィグリングが始まると報告した。同じ発表は、加工の最後に条件を満たしていても、エッチングの途中で一度波打って形が崩れることがあると指摘している。そのため、加工後の断面だけでウィグリングの有無を判断すると見逃す。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.2174/9789815179279123030011","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Bentham：TiN膜の構造と機械特性（2023年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"Darnonらの閾値を式に入れると、結果は観測と矛盾しない。壁のヤング率2GPa、高さ230nm、マスクの応力−2GPa（圧縮2GPa）に、スパッタTiN膜で報告された最大値の約445GPaと、仮定したマスク厚45nmを入れると、限界の線幅は約74nmになる。Darnonらが波打ちを見たのは100nm未満の線だった。同じ式で、28nmピッチの線（幅14nm、高さ100nm）では、限界は約−0.25GPa（圧縮0.25GPa）で、これよりマイナス側でウィグリングする。だから、ピッチを詰めた世代で同じTiNが突然使えなくなる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1149/2.0161609jss","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"ECS JSS：繊維状組織の低応力TiNマスク（2016年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"成膜条件で応力を下げる方向の成功例もある。パナソニックのグループは2016年に、TiNの圧縮応力が溝を変形させ銅の埋め込みに空洞を作ることを示した。スパッタ原子のエネルギーを下げて結晶粒の成長を抑え、繊維状の組織を持つ低応力のTiNにすると、変形を抑えて銅を完全に埋め込めた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1143/jjap.47.8026","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"JJAP：塗布型炭素膜のフッ素化とウィグリング（2008年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"ウィグリングはTiNだけの問題ではない。炭素系のマスクでも、下地を削る間に線が波打つ。東芝のグループは2008年に、塗布型の炭素膜（SOC）で高エネルギーのイオンが膜をフッ素化させ、ウィグリングを起こすことを示した。バイアスの周波数を上げてイオンエネルギーの上限を下げると、38nmの線のウィグリングが抑えられた。イオンが加工中のマスクを変質させて波打ちを起こす点が、TiNの結果と似る。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1116/6.0004116","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"JVST B：プラズマ誘起応力によるウィグリングと表面粗さ（2025年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"2025年の続報は、もう一つの効果を見つけた。プラズマでマスク表面が荒れた試料では、ウィグリングが起きなかった。3次元の有限要素計算でも、表面が粗いほど変形が始まる応力が上がった。下地との選択比を上げて表面の損傷を減らすと、滑らかなTiNの試料だけがウィグリングした。選択比を上げるほどマスクが滑らかに残り、かえって波打ちやすくなるという逆説だ。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://ocw.mit.edu/courses/1-050-solid-mechanics-fall-2004/f9a4d5764b9b0f51ffaacbdf69f7aed8_emech10_04.pdf","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"MIT OpenCourseWare：1.050 Solid Mechanics 第10章 曲げによるたわみ","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**③ 壁のばねの強さ（ばね定数）。** 壁を、高さh・厚さwの板が根元で固定された片持ちはりと見る。先端に力Fをかけた片持ちはりのたわみはδ＝F×L³÷(3×E×I)だ。線の長さ1あたりの壁ではL＝h、I＝w³÷12なので、上端を横へ押したときのばね定数は、k＝F÷δ＝3×Ed×(w³÷12)÷h³＝Ed×w³÷(4×h³)になる。式の「4」は、この3と12から出てくる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.3390/ma19020258","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Materials：弾性床上の圧縮棒の安定性とレイリー商（2026年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**④ ばねに支えられたはりが座屈する力。** 弾性床の上の長いはりが座屈する力は、曲げとばねに蓄えられるエネルギーと、押す力がする仕事の釣り合い（レイリー商）で求まる。はりの横ずれを波長λの正弦波と置くと、押す力はF＝EI×(2π÷λ)²＋k×(λ÷2π)²になる。第1項は波が短いほど、第2項は波が長いほど大きい。Fが最小になる波長で座屈が起き、そのときF＝2×√(k×EI)となる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.semi.org/en/spcc-speaker-bio-wei-shang-lo","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"SEMI：IBM ResearchのWdC導入とTiNの圧縮応力（2026年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"まとめると、WdCが有利になるのは「硬いから」ではない。押す力の元になる応力をほぼゼロか引張に置き、厚さも減らせば、押す力そのものが小さくなるからだ。応力が圧縮のまま残れば、やわらかい分だけTiNより不利になる。採用の条件は、加工中のプラズマを経てもWdCの応力が引張側に残ることだ。IBM ResearchもSPCC 2026で、TiNの圧縮応力によるウィグリングと短絡をWdC導入の理由に挙げている。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1117/12.2661307","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"SPIE：TiNマスクのプラズマ誘起応力とウィグリング（2023年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"TiNの応力は成膜条件で大きく変わる。28nmピッチの多孔質SiOCHをEUVでパターニングして加工した2023年の評価では、PEALDで作ったTiNの応力が−3.6GPa（圧縮）から＋0.2GPa（引張）まで振れた。スパッタで作ったTiNは＋0.1GPaだった。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1117/12.916128","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"SPIE：ウィグリングに強い塗布型炭素マスク（日産化学、2012年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"材料メーカーも要因を調べている。JSRは2012年に、膜中の水素量、ヤング率、密度、耐熱性などを変えた塗布型マスクを合成し、ウィグリングの要因を調べた。日産化学も同じ年に、ウィグリングに強い塗布型炭素マスクの材料設計を報告している。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1117/12.915698","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"SPIE：塗布型有機マスクのウィグリング要因（JSR、2012年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"材料メーカーも要因を調べている。JSRは2012年に、膜中の水素量、ヤング率、密度、耐熱性などを変えた塗布型マスクを合成し、ウィグリングの要因を調べた。日産化学も同じ年に、ウィグリングに強い塗布型炭素マスクの材料設計を報告している。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1016/j.tsf.2025.140848","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Thin Solid Films：WdC膜の構造とエッチング耐性（2026年1月巻号）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"**弱点：膜がやわらかく、同じ応力なら曲がりやすい。** WdC膜のヤング率は最大125GPaで、TiNの約445GPaの3分の1以下だ。限界応力はマスクのヤング率の平方根に比例するので、同じ厚さ・同じ応力なら、WdCの限界は多くてもTiNの約半分しかない。厚さを半分にしても多くて約0.75倍で、TiNに届かない。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"}],"entityLinks":[{"entityType":"technology_topic","entityId":"etch","label":"エッチング","relationRole":"primary_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"deposition-ald","label":"成膜","relationRole":"related_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"interconnect-beol","label":"配線形成","relationRole":"related_topic","confidenceScore":0.95}]},{"technicalArticleId":"448d34a3-fa1a-4951-a8a0-e67f1992c656","canonicalId":null,"slug":"wdc-deposition-suppliers","canonicalPath":"/front-end/wdc-deposition-suppliers/","title":"WdC成膜装置の供給元候補｜Applied・Lam・韓国TES","articleGenreKey":"process_technology_explainer","primaryCompany":{"canonicalId":null,"id":null,"name":null},"primaryEquipmentFamily":{"canonicalId":null,"id":null,"name":null},"primaryProcessKey":null,"articleStatus":"published","publicReviewStatus":"approved","confidenceScore":0.92,"publishedAt":"2026-10-16T02:38:47.867Z","updatedAt":"2026-10-16T23:37:33.727Z","sourceCount":13,"entityCount":3,"tags":["process_technology_explainer"],"sourceLinks":[{"url":"https://www.appliedmaterials.com/us/en/product-library/producer-precision-apf-pecvd.html","sourceType":"official_ir_material","sourceRole":"primary_reference","title":"Applied Materials：Producer Precision APF","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"装置の基盤も厚い。Appliedは炭素ハードマスク装置Producer Precision APFが、先端のDRAM・NAND・ロジックのほぼすべての工場で稼働していると説明する。APFは炭素だけの膜だが、W添加はこの処理室の延長で載せられる、と本稿は見る。顧客から見れば、評価済みの装置に原料とレシピを足す形で試せる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://file.alphasquare.co.kr/media/pdfs/company-ir/20241203%ED%85%8C%EC%8A%A4_%EA%B2%BD%EC%98%81_%ED%98%84%ED%99%A9_%EB%B0%8F_%EC%8B%A4%EC%A0%81_%EC%97%85%EB%8D%B0%EC%9D%B4%ED%8A%B8.pdf","sourceType":"official_ir_material","sourceRole":"primary_reference","title":"TES：会社説明資料（2024年12月）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"TESは2002年設立の韓国の装置メーカーで、主力は炭素ハードマスク（ACL）用のPECVD装置だ。2024年12月の会社説明資料は、ACLの用途を穴加工の保護膜、対象をNAND・DRAM・ロジックとする。メモリ事業の主要顧客にはSamsung電子とSK hynix、競合にはApplied、Lam、TELを挙げる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://newsroom.lamresearch.com/2008-03-17-NOVELLUS-SHIPS-100-VECTOR-EXPRESS-TOOLS-WITHIN-FIRST-YEAR","sourceType":"official_press_release","sourceRole":"primary_reference","title":"Novellus：VECTOR Express出荷とAHM量産（2008年3月）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"製品はVECTORの炭素ハードマスク機VECTOR AHMだ。この系譜は買収したNovellusから続く。2008年3月の発表によると、2007年6月に投入したAHMは、その時点で複数の大手メモリ工場の量産に使われていた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.lamresearch.com/product/vector-product-family/","sourceType":"official_product_page","sourceRole":"primary_reference","title":"Lam Research：VECTOR製品群","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"製品はVECTORの炭素ハードマスク機VECTOR AHMだ。この系譜は買収したNovellusから続く。2008年3月の発表によると、2007年6月に投入したAHMは、その時点で複数の大手メモリ工場の量産に使われていた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US10529568B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：WF₆によるW含有ハードマスク特許（2016年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"W原料の主流はWF₆だ。安いガスで量産に向くが、フッ素が下地との界面に残ると膜がはがれる。Appliedは2016年優先日の特許で、この問題をホウ素の下地層とWの初期層で解いた。同じ特許は、WF₆を使った膜の表面粗さが15 at%のWで0.65nmと、W(CO)₆を使った場合の1.4nmの半分以下になったと書く。TESは逆に、W・C・Nを1分子に含む有機原料だけで膜を作る方法を選び、フッ素そのものを持ち込まない。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/WO2018144198A1/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：W・B・Cハードマスク特許（2017年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"その後もW系の改良が続く。2016年にWF₆の密着問題を解き、2017年にはW・B・Cの3元系マスクで結晶粒と粗さを抑えた。この3元系では、低周波の電力でアルゴンイオンを当て、膜の応力を−0.1〜＋1GPaの範囲で調整できるとしている。2021年優先日の特許では、3D NANDのメモリホール加工向けに、RuやOsを中心とする金属ドープドカーボン膜まで広げた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US12014925B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：金属ドープドカーボンハードマスク特許（2021年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"その後もW系の改良が続く。2016年にWF₆の密着問題を解き、2017年にはW・B・Cの3元系マスクで結晶粒と粗さを抑えた。この3元系では、低周波の電力でアルゴンイオンを当て、膜の応力を−0.1〜＋1GPaの範囲で調整できるとしている。2021年優先日の特許では、3D NANDのメモリホール加工向けに、RuやOsを中心とする金属ドープドカーボン膜まで広げた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US9624577B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：金属ドープドカーボン膜の成膜特許（2014年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"Appliedの出願は2014年に始まる。優先日2014年7月の金属ドープドカーボン膜の特許は、Wを入れた炭素膜でエッチング選択比が40〜80%上がり、その分だけマスクを薄くできると書く。使える処理室の例として、自社のProducerとCentura系を挙げている。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US11345852B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Lam Research：WdCの湿式除去薬液特許（2018年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"湿式の除去も持つ。Lam Research AGの薬液特許は、31%の過酸化水素を70℃で使い、W 50 at%のWdCを毎分75〜133Åで溶かした。腐食防止剤を加えると、銅の溶け方は毎分0.3〜0.6Å、コバルトは0Åまで下がった。銅やコバルトの配線が露出した状態でもWdCだけを消せるので、配線工程での使用を想定した処方だと読める。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US9520295B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Lam Research：金属ドープドカーボンハードマスクの成膜特許（2015年出願）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"Lamの成膜特許は2015年2月出願で、WF₆とメタンをプラズマで反応させ、基板台に2つの周波数の高周波をかけて金属炭化物を含む炭素膜を作る。2017年には酸化膜・窒化膜との界面を作る特許を出し、用途にDRAM、縦型NAND、配線工程を挙げた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US10096475B1/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Lam Research：金属ドープドカーボンマスクの界面特許（2017年出願）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"Lamの成膜特許は2015年2月出願で、WF₆とメタンをプラズマで反応させ、基板台に2つの周波数の高周波をかけて金属炭化物を含む炭素膜を作る。2017年には酸化膜・窒化膜との界面を作る特許を出し、用途にDRAM、縦型NAND、配線工程を挙げた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US11062897B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Lam Research：金属ドープドカーボンマスクの除去特許（2017年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"Lamの強みは、成膜したWdCを消す技術まで自社で出していることだ。WdCは酸素プラズマだけでは削れない。炭素は酸素でCOやCO₂になって抜けるが、Wは塩素と結び付けないと気体にならないからだ。Lamの除去特許の実験では、塩素を混ぜない条件の除去速度は0nm/minだった。別の実験では、200〜400℃で塩素を混ぜた酸素プラズマが、Wを33%と63%含む膜をどちらも毎分約95nmで除去した。特許は、下地の酸化膜に対して1000:1近い選択比が得られるとしている。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US20170342558A1/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"TES：W炭窒化膜の成膜出願（2016年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"W原料の主流はWF₆だ。安いガスで量産に向くが、フッ素が下地との界面に残ると膜がはがれる。Appliedは2016年優先日の特許で、この問題をホウ素の下地層とWの初期層で解いた。同じ特許は、WF₆を使った膜の表面粗さが15 at%のWで0.65nmと、W(CO)₆を使った場合の1.4nmの半分以下になったと書く。TESは逆に、W・C・Nを1分子に含む有機原料だけで膜を作る方法を選び、フッ素そのものを持ち込まない。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"}],"entityLinks":[{"entityType":"technology_topic","entityId":"deposition-ald","label":"成膜","relationRole":"primary_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"etch","label":"エッチング","relationRole":"related_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"interconnect-beol","label":"配線形成","relationRole":"related_topic","confidenceScore":0.95}]},{"technicalArticleId":"b15efd63-2024-4065-9e15-85ec905b3bab","canonicalId":null,"slug":"wdc-hardmask-vs-tin","canonicalPath":"/front-end/wdc-hardmask-vs-tin/","title":"TiNマスクのウィグリングとWdC｜代償は除去工程の作り直し","articleGenreKey":"process_technology_explainer","primaryCompany":{"canonicalId":null,"id":null,"name":null},"primaryEquipmentFamily":{"canonicalId":null,"id":null,"name":null},"primaryProcessKey":null,"articleStatus":"published","publicReviewStatus":"approved","confidenceScore":0.92,"publishedAt":"2026-10-16T02:18:11.428Z","updatedAt":"2026-10-16T23:37:33.727Z","sourceCount":11,"entityCount":3,"tags":["process_technology_explainer"],"sourceLinks":[{"url":"https://patents.google.com/patent/US10529568B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：WF₆によるW含有ハードマスク特許（2016年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"WdCのW量を増やすほど、膜の表面は粗くなる。Appliedの特許は、粗さと大きな結晶粒が加工後の線幅のばらつきを悪化させると課題に挙げる。AppliedはWF₆を使い、下地にホウ素層を敷く方法で、表面粗さをW 15 at%で0.65nm、30 at%で0.97nmに抑えた。W原料にW(CO)₆を使うと、それぞれ1.4nmと2.7nmだった。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/WO2018144198A1/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：W・B・Cハードマスク特許（2017年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"応力は成膜中のイオン照射で動かせる。Applied MaterialsのW・B・C系マスクの特許は、350kHzの低周波電力でアルゴンイオンを当て、膜全体の応力を−0.1GPaから＋1GPaの範囲で調整できるとする。TiNの評価では、成膜条件で−3.6GPaから＋0.2GPaまで動いた。どちらもプラズマに当てる前の値だ。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1063/1.4882080","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"CEA-Leti：多孔質low-kのウィグリングと金属マスク応力の計算（2014年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"溝を掘ると、溝と溝の間に細い絶縁膜の壁が残る。上に載ったTiNが圧縮応力（符号はマイナス）を持つと、マスクは伸びたがるが、壁に貼り付いているのでまっすぐのままでは伸びられない。根元の動かない壁の上端が左右にくねり、線が波打つ。CEA-Letiの研究は、このウィグリングを硬いマスクの圧縮応力が柔らかい多孔質膜を変形させて緩和する現象と説明し、TiNの応力と厚さ、線の幅と高さ、膜のヤング率（伸び縮みのしにくさ）が効くことを有限要素計算で示した。ウィグリングの力学モデルと研究の数値はウィグリングの座屈モデルにまとめた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1109/CSTIC61820.2024.10531997","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"IEEE：NAURAのWdC開口エッチング研究（2024年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"開口、つまりWdCそのものに形を写す工程にも別の条件が要る。NAURAの2024年の研究では、酸素系プラズマに足す反応ガスとして、NF₃のほうが塩素より速くWdCを削った。上に載せる酸化膜マスクとの選択比（2つの膜が削れる速さの比）は、パルス化した高周波、BCl₃の添加、ウェハを載せる台の低温化で上がった。W炭化物（WC）マスクでは、プラズマを作るコイルの電気的な条件を変え、塩素・酸素プラズマで毎分881Åまでエッチング速度を上げた報告もある。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1116/6.0005300","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"JVST B：WC系マスクのエッチング速度と選択比の改善（2026年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"開口、つまりWdCそのものに形を写す工程にも別の条件が要る。NAURAの2024年の研究では、酸素系プラズマに足す反応ガスとして、NF₃のほうが塩素より速くWdCを削った。上に載せる酸化膜マスクとの選択比（2つの膜が削れる速さの比）は、パルス化した高周波、BCl₃の添加、ウェハを載せる台の低温化で上がった。W炭化物（WC）マスクでは、プラズマを作るコイルの電気的な条件を変え、塩素・酸素プラズマで毎分881Åまでエッチング速度を上げた報告もある。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1116/6.0004116","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"JVST B：プラズマ誘起応力によるウィグリングと表面粗さ（2025年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"ところが、マスクがエッチングのプラズマに当たると話が変わる。同じ評価では、プラズマに当てなければ低応力のTiNでウィグリングを防げた。しかし通常の配線工程のようにプラズマに当てると、すべてのTiNで応力がマイナス側（圧縮側）へ動き、成膜時に＋0.1GPa（わずかに引張）だったスパッタTiNでもウィグリングした。増え方は成膜直後の応力と相関しなかった。2025年の続報も、成膜時に低応力や引張だったTiNが、プラズマによる圧縮応力の増加でウィグリングし始めることを確かめている。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US11345852B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Lam Research：WdCの湿式除去薬液特許（2018年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"配線工程では、除去の時に銅やコバルトの配線が露出していることがある。湿式なら、Lamのグループ会社の薬液特許が具体的な処方を示す。31%の過酸化水素を70℃で使うと、W 50 at%のWdCは毎分45Å溶けた。ここに腐食防止剤を加えると、WdCは毎分75〜133Å溶けたまま、銅は毎分0.3〜0.6Å、コバルトは0Åまで抑えられた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US11062897B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Lam Research：金属ドープドカーボンマスクの除去特許（2017年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"Lam Researchの除去特許は、ウェハを200〜400℃に加熱し、酸素に塩素を10〜40%混ぜたプラズマで約1µmのWdCをきれいに除去した。塩素を入れない条件では除去速度は0nm/minで、塩素を入れると圧力やウェハの位置によって毎分70nmから140nm超まで上がった。Wを33%と63%含む膜は、どちらも毎分約95nmで除去できた。特許は、下地の酸化膜に対して1000:1近い選択比が得られるとしている。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.semi.org/en/spcc-speaker-bio-wei-shang-lo","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"SEMI：IBM ResearchのWdC端部の湿式処理（2026年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"間隔が縮んだ所では、埋めた銅どうしが近づいて絶縁不良や短絡を起こす。IBM ResearchもSPCC 2026の講演で、TiNの高い圧縮応力がウィグリングを招き、配線の短絡につながることを、WdCを導入する理由に挙げている。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1117/12.2661307","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"SPIE：TiNマスクのプラズマ誘起応力とウィグリング（2023年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"それならTiNの応力を下げればよい、と考えるのが自然だ。実際、TiNは成膜方法で応力が大きく変わる。28nmピッチの多孔質SiOCHを加工した2023年の評価では、PEALDで作ったTiNの応力が−3.6GPa（圧縮）から＋0.2GPa（引張）まで振れた。スパッタで作ったTiNは＋0.1GPaだった。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1016/j.tsf.2025.140848","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Thin Solid Films：WdC膜の構造とエッチング耐性（2026年1月巻号）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"WdCは、非晶質の炭素の中にWを取り込んだ膜だ。PECVDで炭化水素ガスにWF₆を足して成膜する。プロピレンとWF₆を使った2025年の研究では、WF₆の流量でWを最大40 at%まで入れ、炭素の中に3〜4nmの炭化タングステン（WC）微結晶が生じた。密度は1.36g/cm³から8.24g/cm³へ、押し込み硬さ（膜に針を押し込んだときのへこみにくさ）は3.2GPaから10.5GPaへ上がり、フルオロカーボンプラズマでのエッチング速度は無添加の炭素膜より55%遅くなった。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"}],"entityLinks":[{"entityType":"technology_topic","entityId":"etch","label":"エッチング","relationRole":"primary_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"deposition-ald","label":"成膜","relationRole":"related_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"interconnect-beol","label":"配線形成","relationRole":"related_topic","confidenceScore":0.95}]},{"technicalArticleId":"706e1258-b2c7-4b6c-9a13-bee518bdee68","canonicalId":null,"slug":"wdc-hardmask-history-integration","canonicalPath":"/front-end/wdc-hardmask-history-integration/","title":"WdCハードマスクの歴史｜メモリの深穴から配線工程へ","articleGenreKey":"process_technology_explainer","primaryCompany":{"canonicalId":null,"id":null,"name":null},"primaryEquipmentFamily":{"canonicalId":null,"id":null,"name":null},"primaryProcessKey":null,"articleStatus":"published","publicReviewStatus":"approved","confidenceScore":0.92,"publishedAt":"2026-10-16T02:18:11.428Z","updatedAt":"2026-10-16T23:37:33.727Z","sourceCount":12,"entityCount":3,"tags":["process_technology_explainer"],"sourceLinks":[{"url":"https://patents.google.com/patent/US10529568B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：WF₆によるW含有ハードマスク特許（2016年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"| 優先日 | 出願人 | 解いた課題 |\r\n|---|---|---|\r\n| 2016年1月 | Applied | ホウ素の下地層でWF₆膜のはがれを防ぐ。粗さはW(CO)₆原料の約半分 |\r\n| 2017年2月 | Applied | W・B・Cの3元系で結晶粒と粗さを抑え、除去しやすく |\r\n| 2017年6月 | Lam | 酸素に塩素を足した高温プラズマで除去、対酸化膜1000:1 |\r\n| 2017年11月 | Lam | 下地の窒化と薄い炭素層で界面を作る。用途にDRAM・縦型NAND・配線工程 |\r\n| 2018年8月 | Lam Research AG | 過酸化水素と防食剤で、銅・コバルトを残してWdCを溶かす |","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/WO2018144198A1/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：W・B・Cハードマスク特許（2017年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"| 優先日 | 出願人 | 解いた課題 |\r\n|---|---|---|\r\n| 2016年1月 | Applied | ホウ素の下地層でWF₆膜のはがれを防ぐ。粗さはW(CO)₆原料の約半分 |\r\n| 2017年2月 | Applied | W・B・Cの3元系で結晶粒と粗さを抑え、除去しやすく |\r\n| 2017年6月 | Lam | 酸素に塩素を足した高温プラズマで除去、対酸化膜1000:1 |\r\n| 2017年11月 | Lam | 下地の窒化と薄い炭素層で界面を作る。用途にDRAM・縦型NAND・配線工程 |\r\n| 2018年8月 | Lam Research AG | 過酸化水素と防食剤で、銅・コバルトを残してWdCを溶かす |","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US9624577B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Applied Materials：金属ドープドカーボン膜の成膜特許（2014年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"Appliedの2014年優先日の特許は、この悪循環を金属添加で断つ提案だ。縦横比10〜75の深いコンタクトではマスクが積層全体の10〜40%を占めるとし、炭素膜にWを入れると選択比が40〜80%上がり、マスクを同じ割合だけ薄くできると書く。同じ特許は、20nm以下の細い構造で圧縮応力が線を曲げたり切ったりする問題も挙げていた。応力の問題は、最初から耐性と並ぶ課題だった。Lamの2015年の出願も、3Dメモリ向けに高い選択比を求めて炭素膜を金属で緻密にする狙いを掲げた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1109/CSTIC61820.2024.10531997","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"IEEE：NAURAのWdC開口エッチング研究（2024年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"2020年代に入ると、特許から学会発表へ舞台が移る。発表の中心は膜そのものより、WdCを工程に組み込む条件だ。中国の装置メーカーNAURAは2024年に、WdCを開口するエッチング条件を発表した。酸素系プラズマにNF₃を足すと塩素より速く削れ、上の酸化膜マスクとの選択比はパルス化した高周波とBCl₃の添加で上がった。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US11345852B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Lam Research：WdCの湿式除去薬液特許（2018年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"| 優先日 | 出願人 | 解いた課題 |\r\n|---|---|---|\r\n| 2016年1月 | Applied | ホウ素の下地層でWF₆膜のはがれを防ぐ。粗さはW(CO)₆原料の約半分 |\r\n| 2017年2月 | Applied | W・B・Cの3元系で結晶粒と粗さを抑え、除去しやすく |\r\n| 2017年6月 | Lam | 酸素に塩素を足した高温プラズマで除去、対酸化膜1000:1 |\r\n| 2017年11月 | Lam | 下地の窒化と薄い炭素層で界面を作る。用途にDRAM・縦型NAND・配線工程 |\r\n| 2018年8月 | Lam Research AG | 過酸化水素と防食剤で、銅・コバルトを残してWdCを溶かす |","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US9520295B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Lam Research：金属ドープドカーボンハードマスクの成膜特許（2015年出願）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"Appliedの2014年優先日の特許は、この悪循環を金属添加で断つ提案だ。縦横比10〜75の深いコンタクトではマスクが積層全体の10〜40%を占めるとし、炭素膜にWを入れると選択比が40〜80%上がり、マスクを同じ割合だけ薄くできると書く。同じ特許は、20nm以下の細い構造で圧縮応力が線を曲げたり切ったりする問題も挙げていた。応力の問題は、最初から耐性と並ぶ課題だった。Lamの2015年の出願も、3Dメモリ向けに高い選択比を求めて炭素膜を金属で緻密にする狙いを掲げた。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US10096475B1/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Lam Research：金属ドープドカーボンマスクの界面特許（2017年出願）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"| 優先日 | 出願人 | 解いた課題 |\r\n|---|---|---|\r\n| 2016年1月 | Applied | ホウ素の下地層でWF₆膜のはがれを防ぐ。粗さはW(CO)₆原料の約半分 |\r\n| 2017年2月 | Applied | W・B・Cの3元系で結晶粒と粗さを抑え、除去しやすく |\r\n| 2017年6月 | Lam | 酸素に塩素を足した高温プラズマで除去、対酸化膜1000:1 |\r\n| 2017年11月 | Lam | 下地の窒化と薄い炭素層で界面を作る。用途にDRAM・縦型NAND・配線工程 |\r\n| 2018年8月 | Lam Research AG | 過酸化水素と防食剤で、銅・コバルトを残してWdCを溶かす |","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US11062897B2/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Lam Research：金属ドープドカーボンマスクの除去特許（2017年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"3D NANDは、酸化膜と窒化膜を何十層も重ねた積層に、上から下まで1本の穴（チャネルホール）を掘る。Lamの除去特許が挙げる例では、直径約100nmの穴を厚さ4µmの積層に掘るのに、1.5〜2µmのマスクを使う。DRAMのキャパシタも、直径20〜30nmで縦横比50〜60の穴を、厚さ1〜1.5µmのマスクで掘る。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.semi.org/en/spcc-speaker-bio-wei-shang-lo","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"SEMI：IBM ResearchのWdC端部の湿式処理（2026年）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"配線側では、IBM ResearchがSPCC 2026でWdCを配線工程へ組み込む際の端部処理を発表した。導入理由はTiNの圧縮応力が招く線のウィグリングと短絡で、ウェハ外周へ回り込んだWdCを湿式処理で完全に除去し、パターン付きウェハの電気特性を保った。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.google.com/patent/US20170342558A1/en","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"TES：W炭窒化膜の成膜出願（2016年優先日）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"従来のマスクは非晶質の炭素膜だった。韓国の装置メーカーTESの2016年の出願は、その対酸化膜の選択比を3〜4:1と書く。穴を4µm掘る間にマスクも1µm以上削れる計算で、マスクを厚くするしかない。厚くすると穴全体がさらに深くなり、底までエッチングの反応種が届きにくくなる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://patents.justia.com/patent/11004740","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"TSMC：自己整合配線の特許11,004,740（2021年登録）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"同じ年、TSMCも配線構造の特許（2018年9月優先日、2021年登録）でWdCを名指しした。この特許は、銅を溝に埋める従来のダマシンとは逆に、Mo・W・Ruの金属膜をハードマスクで直接エッチングして配線にする。マスクの材料として請求項6と16がTiNとWdCを挙げる。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://doi.org/10.1016/j.tsf.2025.140848","sourceType":"standards_or_public_research","sourceRole":"primary_reference","title":"Thin Solid Films：WdC膜の構造とエッチング耐性（2026年1月巻号）","publishedAt":null,"retrievedAt":"2026-10-16T23:37:33.727429+00:00","evidenceSummary":"メモリ側の材料開発も続く。2025年の論文はプロピレンとWF₆でWを最大40 at%まで入れ、押し込み硬さ（へこみにくさ）を3.2GPaから10.5GPaへ上げた。論文は3D NANDの深穴加工を背景に挙げ、謝辞に中国の3D NANDメーカーYMTCの支援を記す。","confidenceScore":0.92,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"}],"entityLinks":[{"entityType":"technology_topic","entityId":"etch","label":"エッチング","relationRole":"primary_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"deposition-ald","label":"成膜","relationRole":"related_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"interconnect-beol","label":"配線形成","relationRole":"related_topic","confidenceScore":0.95}]},{"technicalArticleId":"be85eaf2-e163-4bce-8ba9-3336ca0c3da2","canonicalId":null,"slug":"amat-lam-tel-3d-packaging-tools","canonicalPath":"/systems/amat-lam-tel-3d-packaging-tools/","title":"3D実装装置の競合、工程ごとに相手が変化｜接合機はAMATのD2WとTELのW2W","articleGenreKey":"process_technology_explainer","primaryCompany":{"canonicalId":null,"id":null,"name":null},"primaryEquipmentFamily":{"canonicalId":null,"id":null,"name":null},"primaryProcessKey":null,"articleStatus":"published","publicReviewStatus":"approved","confidenceScore":0.9,"publishedAt":"2026-10-06T13:48:56.676Z","updatedAt":"2026-10-06T13:48:56.676Z","sourceCount":11,"entityCount":5,"tags":["process_technology_explainer"],"sourceLinks":[{"url":"https://ir.appliedmaterials.com/news-releases/news-release-details/applied-materials-unveils-next-gen-chipmaking-products/","sourceType":"official_ir_material","sourceRole":"primary_reference","title":"Applied 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Seriesの製品説明。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.lamresearch.com/product/syndion-product-family/","sourceType":"official_technology_article","sourceRole":"primary_reference","title":"Lam Research：Syndionの製品説明","publishedAt":null,"retrievedAt":"2026-10-06T13:48:56.676441+00:00","evidenceSummary":"Lam Research：Syndionの製品説明。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"},{"url":"https://www.tel.com/product/synapse-ulucus.html","sourceType":"official_technology_article","sourceRole":"primary_reference","title":"東京エレクトロン：Synapse・Ulucusシリーズの製品説明","publishedAt":null,"retrievedAt":"2026-10-06T13:48:56.676441+00:00","evidenceSummary":"東京エレクトロン：Synapse・Ulucusシリーズの製品説明。記事本文で引用した一次資料。","confidenceScore":0.9,"republicationPolicy":"no_fulltext_republication","publicCopyBoundary":"official_link_and_original_summary_only"}],"entityLinks":[{"entityType":"technology_topic","entityId":"equipment-vendors","label":"装置メーカー比較","relationRole":"primary_topic","confidenceScore":0.95},{"entityType":"technology_topic","entityId":"dicing-thinning","label":"ダイシング・薄化","relationRole":"related_topic","confidenceScore":0.8},{"entityType":"technology_topic","entityId":"wafer-bonding","label":"ボンディング","relationRole":"related_topic","confidenceScore":0.85},{"entityType":"technology_topic","entityId":"advanced-packaging","label":"先端パッケージ（2.5D・3D・チップレット）","relationRole":"related_topic","confidenceScore":0.85},{"entityType":"technology_topic","entityId":"cleaning","label":"洗浄・表面処理","relationRole":"related_topic","confidenceScore":0.8}]},{"technicalArticleId":"9a534a89-268a-4345-a58e-d3dbb9d4702d","canonicalId":null,"slug":"3di-thermal-conduction-measurement","canonicalPath":"/back-end/3di-thermal-conduction-measurement/","title":"3D積層の熱抵抗、hotspotは別に測定｜imec試験、25 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