Principal Medium Voltage (MV) Power MOSFET Process Integration Engineer

S. in Electrical Engineering, Physics, or a related fieldUp to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFETsSolid understanding of power device physics and semiconductor fabrication processesHands-on experience with TCAD tools and simulation-based device analysisIntermediate-level proficiency in both written and spoken English and Japanese Renesas is an embedded semiconductor solution provider driven by its Purpose, To Make Our Lives Easier. With a global team of over 21,000 engineers and problem solvers in more than 30 countries, we offer the opportunity to work on world‐leading technology for Automotive, Industrial, Infrastructure, and IoT, shaping a safer, healthier, greener, and smarter future.At Renesas, TAGIE is our culture, grounded in being Transparent, Agile, Global, Innovative, and Entrepreneurial. It shapes how we work, grow and deliver on our purpose together. This collaborative spirit and mindset drive our semiconductor technology to transform industries and impact millions of lives.We believe in rewarding our employees with a competitive benefits package alongside their salary. More information will be provided during the hiring process.Are you ready to join our team and shape the future with us?Renesas Electronics is an equal opportunity and affirmative action employer, committed to supporting diversity and fostering a work environment free of discrimination on the basis of sex, race, religion, national origin, gender, gender identity, gender expression, age, sexual orientation, military status, veteran status, or any other basis protected by law. For more information, please read our Diversity & Inclusion Statement.