TSMCファウンドリー
APR/Physical Design Engineer 1
- 勤務地神奈川県横浜市 / 大阪府大阪市
- デバイス・プロセス・設計アナログ・ミックスドシグナル・RF回路設計
- 中途
仕事内容
Job Description
'-Memory architecture design (SRAM, DRAM, MRAM, RRAM, PCRAM and eFlash) -Read and write critical path design and analysis -Design of key building blocks (sensing, analog, high voltage, DFT) -Chip-level design verification -Embedded non-volatile memory compiler and productization -Co-work with product/reliability engineer on silicon characterization and reliability qualification
応募条件
必須
- '-The candidates should have at least bachelor degree in relevant field.
- Memory experts in the field of SRAM.
- Familiar with bit cell characteristics (Vmin, bit cell performance, write margin), sense amplifier design, high sigma variation analysis, race check, margin signoff.
- Knowledge on high speed and low Vmin design is a plus.
- Highly welcome candidates who have less experience but have good Memory Design design experience, working attitude and are self-motivated.
- Good comma.
募集要項の原文
Qualifications '-The candidates should have at least bachelor degree in relevant field. -Memory experts in the field of SRAM. -Familiar with bit cell characteristics (Vmin, bit cell performance, write margin), sense amplifier design, high sigma variation analysis, race check, margin signoff. -Knowledge on high speed and low Vmin design is a plus. -Highly welcome candidates who have less experience but have good Memory Design design experience, working attitude and are self-motivated. -Good comma...
勤務条件
- 勤務地
- 神奈川県横浜市 / 大阪府大阪市