ISPSD 2027International Symposium on Power Semiconductor Devices and ICs

渡航手配の判断材料は会場住所とアクセス情報が公開済みの Venue ページから取れます。

2026 会期・会場

May 24 - 28, 2026 / MGM Grand Conference Center, 4701 Koval Ln, Las Vegas, NV 89109（米国 Nevada 州 Las Vegas） Program の GENERAL INFORMATION / Conference Venue と General Chair's Message IEEE ISPSD 2026 Program Book（PDF）

2026 開催形式

I am very pleased that we can offer the conference as an in-person format to allow the face-to-face engagements that are at the heart of ISPSD 2026. General Chair's Message。 IEEE ISPSD 2026 Program Book（PDF）

2027 会期・会場

June 13–17, 2027、Taipei International Convention Center (TICC), Taipei, Taiwan General Chair メッセージ本文 IEEE ISPSD 2027 Message from the Chair

2027 会場住所・アクセス

No. 1, Sec. 5, Xinyi Road, Taipei 11049, Taiwan / Taipei 101/World Trade Center Metro Station (Exit 1) バス・タクシー、車椅子対応設備の記載もある IEEE ISPSD 2027 Venue & Accommodation

2025 会期・会場

June 1-5, 2025 / Venue: Kumamoto-Jo Hall, Kumamoto, Japan ISPSD 2025 公式トップ

テンプレートは IEEE の conference テンプレート、用紙は US Letter、提出形式は PDF で、最終原稿の締切には著作権手続きが含まれます。

2026 投稿方式の変更

Please Note: ISPSD 2026 has changed the paper submission process. Note that a 4-page full paper submission is required. Traditional “Abstract Submission” will NOT be accepted. No late news session. IEEE ISPSD 2026 First Call for Papers（PDF）

2026 書式

Template: https://www.ieee.org/conferences/publishing/templates.html / Paper length: Maximum 4 pages / Paper size: US Letter / File format: Adobe PDF (.pdf) IEEE ISPSD 2026 First Call for Papers（PDF）

2026 締切（Call for Papers ページ掲載値）

4-page full paper submission deadline: Jan 12, 2026 → Jan 19, 2026（NEW と表示）/ Author notification: Mar 3, 2026 / Final submission deadline for final paper and copyright filing: Mar 12, 2026 締切は延長後の値が矢印で併記されている IEEE ISPSD 2026 Call for Papers（Web）

2026 締切（First CFP PDF 掲載値）

Jan 19, 2026: 4-pages full paper submission / March 2, 2026: Author notification / March 16, 2026: Final submission deadline for final paper and copyright filing Web 側が更新後の値 IEEE ISPSD 2026 First Call for Papers（PDF）

2027 締切

Nov 11, 2026: Paper submission site open / Dec 16, 2026: 4-page full paper submission deadline / Jan 29, 2027: Author notification / Feb 19, 2027: Final submission deadline for final paper and copyright filing IEEE ISPSD 2027 公式トップ

2025 締切（参考・前回日本開催）

February 14, 2025: 4-page full paper submission deadline / March 24, 2025: Author notification / April 7, 2025: Final submission deadline for final paper and copyright filing 2025 も「4-page full paper submission is required.」「No late news session.」と明記 ISPSD 2025 Call for Paper

2026 投稿システム

epapers submission site: https://epapers2.org/ispsd2026 公式トップの Useful Links からリンクされている投稿・プログラム管理システム IEEE ISPSD 2026 公式トップ

同一所属の論文は採点せず、討議時には退室するという利益相反ルールも明記されています。

選考主体

The primary functions of the TPC are to solicit abstracts, to review them, and to select papers for publication and presentation at the ISPSD. Guidelines Rev. 7.0 [9] Technical Program Committee ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

採点基準（PAC）の構造

The PAC consists of two-tier systems with technical items and material content/presentation quality. The submitted papers are put in 6 technical items with different weighing factors (WF). Each item has 5-grade ratings of material content/presentation quality. Guidelines Rev. 7.0 Appendix II ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

評価6項目と重み（サンプル表）

Novelty of concept 1.0 / Potential impact including applications 1.0 / Experimental support 0.9 / Theoretical or simulation support 0.7 / Clarity of figures and technical writing 0.8 / Review of prior work 0.6、Total Score: Σ (A x B)（MAX: 20.0） Guidelines Rev. 7.0 Appendix II の Evaluation Table（Sample）。重みは General Chair と TPC Chair（必要なら Steering Chair）が提案し AdCom が承認 ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

利益相反・守秘の規定

TPC members should not score those papers written by authors from the same affiliation (first authors or co-authors). During the paper selection meeting, TPC members should leave the paper selection meeting room whenever a paper by authors from their affiliation is being discussed. / TPC members have an obligation to keep the contents of submitted papers confidential. Guidelines Rev. 7.0 [9] Paper Selection Meeting ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

選考会議の時期と形式

The meeting is preferably held in early December of the year prior to the ISPSD.（IEDM 等の関連会議に合わせて開催することが望ましく、出席できない TPC メンバー向けに Internet-based meeting access を用意する） Guidelines Rev. 7.0 [9] Paper Selection Meeting ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

TPC の規模目安

The target size of the TPC is about 15% of the average conference attendance. As of March 2013, the target membership is 60 people including the TPC Chair and Sub-committee Chairs, based on an average attendance of about 400 for the past three years. Guidelines Rev. 7.0 [9] Organization。目標値として記載 ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

2026 scope 文

ISPSD is the premier forum for technical discussions in all areas of power semiconductor devices and power integrated circuits, including but not limited to device physics, modeling, design, fabrication, materials, packaging and integration, device reliability, and device/circuit interactions. 公式が用いている「premier forum」という表現をそのまま引用 IEEE ISPSD 2026 First Call for Papers（PDF）

2026 Conference Submission Tracks

High Voltage Devices (HV) / Low Voltage Devices and Power IC Device Technology (LVT) / Power IC Design (ICD) / GaN and Nitride-based Compound Materials / SiC and Other Materials (SiC) / Module and Packaging Technologies (PK) の6カテゴリ IEEE ISPSD 2026 First Call for Papers（PDF）

2026 CFP における HV と LVT の耐圧による線引き

HV は「High voltage silicon based discrete devices (>200V) such as SJ-MOSFETs, IGBTs, thyristors and pn-diodes」、LVT は「Low voltage silicon based discrete power devices (≤200V) and devices for power ICs of all voltage ranges」 IEEE ISPSD 2026 First Call for Papers（PDF）

2026 CFP における SiC カテゴリの範囲

SiC and other materials (e.g., Ga2O3, diamond) based power devices, technology and integration Ga2O3・ダイヤモンドは独立カテゴリではなく SiC カテゴリ内に位置づけ IEEE ISPSD 2026 First Call for Papers（PDF）

カテゴリ細目（Appendix I）

Appendix I に各サブコミッティの具体項目を列挙。例：HV に「New edge terminations」「Safe operating areas and current filament effects in IGBT」、ICD に「Gate driver circuit design including WBG power device applications」「Power SoC and passive component integration on a chip」、PK に「3D-package and stray inductance management」「Package insulation technology and material, high temperature endurance」 Technology categories of sub-committees were revised by the AdCom meeting of ISPSD2017 と明記 ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

カテゴリの改廃ルール

As the industry and conference evolve, the AdCom should review, redefine, add, combine, and remove categories, as appropriate. Guidelines Rev. 7.0 [9] Sub-committees ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

2026 実際のセッション名

Plenary / HV1 New Power Device Designs and IGBTS / SiC-1 SiC Novel Designs and Processes / GaN-1 Novel GaN Power Devices and Technologies / LVT1 Low Voltage Lateral Devices / SiC-2 SiC Device Design for Reliability and Ruggedness / Next Generation Power ICs / GaN-2 Vertical GaN Power Devices / HV2 High Voltage Power Devices / Ga2O3 Ultra Wide Bandgap Devices / Module and Packaging Technologies / SiC-3 Beyond Conventional Device Structures / GaN-3 GaN Power Device Reliability and Systems / LVT2 Low Voltage Vertical Devices 公式投稿・プログラムシステム（epapers）の Session Index に掲載の lecture session 一覧 ISPSD 2026 公式投稿・プログラムシステム Session Index

short course は GaN 双方向スイッチ・SiC・パッケージング・gate driver・UWBG・HVDC の6講義で、初学者が1日で業界地図を掴む用途に向きます。前年度の Ohmi Best Paper Award と Charitat Young Researcher Award は翌年の会議で表彰されます。

2026 plenary（1件目）

Power Delivery as the Limiting Factor in AI Systems: From Transistor Scaling to Rack-Scale Power Architecture / Dr. Ahmed Abou-Alfotouh, AMD, USA IEEE ISPSD 2026 Program Book（PDF）

2026 plenary（2件目）

Power Electronics Systems for Heavy-Duty Off-Road Vehicles / Dr. Brij Singh, John Deere, USA IEEE ISPSD 2026 Program Book（PDF）

2026 short course

Date: Sunday, May 24, 2026, 8:30-16:30 / Short Course Chair: Prof. Victor Veliadis, PowerAmerica/NC State, USA。SC1 Lateral GaN Bi-Directional Switch Technology: Target Applications and New Trends（Dr. Kennith K. Leong, Infineon, Austria）、SC2 Introduction to Silicon Carbide Power Devices: Power MOSFETs and IGBTs（Dr. Sei-Hyung Ryu, Wolfspeed, USA）、SC3 Advanced Packaging Solutions for Full Exploitation of SiC Power Switches（Prof. Alberto Castellazzi, Kyoto University of Advanced Science, Japan）、SC4 How Active Gate Drivers and Power ICs Improve Power Semiconductor Device Performance（Dr. Nicolas Rouger, Université de Toulouse, France）、SC5 Ultra-Wide-Bandgap Semiconductors for Next-Generation Power Electronics（Dr. Robert Kaplar, Sandia National Laboratories, USA）、SC6 Gigawatt AI Data Centers: HVDC Power Delivery and Power Semiconductor Needs（Prof. John Shen, Simon Fraser University, BC, Canada） 会場は MGM Grand Conference Center, 3rd Floor, Chairman's Ballroom Rm 364-369 IEEE ISPSD 2026 Program Book（PDF）

2026 セッション構成

Opening Session（Mon May 25 8:30-9:00）、Plenary Session（2件、9:00-10:20）に続き、HV-1／SiC-1／GaN-1／LVT-1／SiC-2／ICD／GaN-2／HV-2／Ga2O3／PK／SiC-3／GaN-3／LVT-2 の lecture session、Poster 1（Tue 16:30-18:00）、Poster 2（Wed 15:30-17:00）、Closing Session（Thu 14:50-15:20） 同表では各 lecture session 名の後ろに件数が括弧で付記されている（例 HV-1 (4)、SiC-1 (5)） IEEE ISPSD 2026 Program Book（PDF）

2026 で表彰された前年度受賞

ISPSD2025 Ohmi Best Paper Award: GaN/SiC-Based Polarization Superjunction Hybrid HEMTs (PSJ-hyHEMTs) on Vicinal Off-Angle SiC（Akira Nakajima ほか、AIST, Tsukuba, Ibaraki, Japan）／ISPSD2025 Charitat Young Researcher Award: First Demonstration of a Fully-Vertical GaN Power finFET with Direct Optical Triggering（Jung-Han Hsia ほか、MIT）／ISPSD2025 Best Poster Award: Low ON-Resistance Vertical GaN-on-GaN Trench MIS-FET with Small Temperature Dependence（Zaitian Han ほか、University of Science and Technology of China） 前年の受賞が翌年会議で掲示・表彰される運用 IEEE ISPSD 2026 Program Book（PDF）

2026 社交行事・展示

Monday Welcome Reception（May 25, 18:00–20:00、登録費に含む）、Banquet（Wednesday, May 27, 19:00–22:00、登録費に含む、Hall of Fame と同枠）。EXHIBITORS ページに CENTROTHERM、LAM RESEARCH と EXHIBITOR FLOOR MAP を掲載 2026 Program の SOCIAL EVENTS と EXHIBITORS。 IEEE ISPSD 2026 Program Book（PDF）

2025 plenary

Prof. Umesh Mishra（ECE Department, UC Santa Barbara, CA, USA）「Gallium Nitride; past, present and future in an ever-changing market」／Mr. Junichi Kitano（Central Japan Railway Company, Japan）「Chuo Sinkansen with Superconducting Maglev and Semiconductor Power Conversion」 ISPSD 2025 Plenary Speakers

2027 の予定構成

ISPSD 2027 will feature a comprehensive technical program, including keynote and plenary talks, oral and poster sessions, and a short course. General Chair メッセージ。 IEEE ISPSD 2027 Message from the Chair

名簿に印字された所属の所在国は、TPC 側が米国・カナダ・英国・ドイツ・ベルギー・フランス・イタリア・スペイン・スイス・日本・中国・香港・台湾・韓国の14か国・地域で、Advisory Committee 側にはこれに加えてオーストリア（Infineon Technologies, Austria）が並びます。

2026 Executive Committee（公式サイト表記）

General Chair: David Sheridan, Alpha & Omega Semiconductor, USA / Past General Chair: Wai Tung Ng, University of Toronto, Canada / Technical Program Chair: Sameh Khalil, Infineon, USA / Treasurer: Sameer Pendharkar, Texas Instruments, USA / Publications Chair: Andy Ritenour, Western Carolina University, USA / Short Courses Chair: Victor Veliadis, North Carolina State University, USA / Exhibition Chair: Pete Losee, Onsemi, USA / Webmaster: Hélène Ma Yang, University of Toronto, Canada / Past Technical Chair: Ichiro Omura, Kyushu Institute of Technology, Japan（氏名が入っているのは9名） 2026 Committee Members ページの Executive Committee。Program PDF 側の ORGANIZING COMMITTEE には Past Technical Chair の行がなく8名 IEEE ISPSD 2026 Committee Members

2026 Advisory Committee

Gehan Amaratunga（Cambridge University, UK）、Kevin Chen（HKUST, Hong Kong, China）、Tat-Sing Paul Chow（Rensselaer Polytechnic Institute, USA）、Don Disney（Infineon Technologies, Germany）、Oliver Häberlen（Infineon Technologies, Austria）、Kimimori Hamada（Huawei Technologies, Japan）、Nando Kaminski（University of Bremen, Germany）、Gourab Majumdar（Mitsubishi Electric, Japan）、Peter Moens（onsemi, Belgium）、Mutsuhiro Mori（Waseda University, Japan）、Hiromichi Ohashi（NPERC-J, Japan）、Yasukazu Seki（Fuji Electric, Japan）ほか、計23名を掲載 IEEE ISPSD 2026 Program Book（PDF）

2026 TPC のカテゴリ別 Chair

HV: Karthik Padmanabhan, Alpha and Omega Semiconductor, USA / LVT: Xin Lin, NXP Semiconductors, USA / ICD: Wei-Jia Zhang, HKUST, Hong Kong, China / GaN: Dong Seup Lee, Texas Instruments, USA / SiC: Alexander Bolotnikov, onsemi, USA / PK: Emre Gurpinar, Joby Aviation, USA 2026 Program の TECHNICAL PROGRAM COMMITTEE IEEE ISPSD 2026 Program Book（PDF）

2026 TPC 名簿に印字された所属の所在国

USA、Canada、UK、Germany、Belgium、France、Italy、Spain、Switzerland、Japan、China、Hong Kong China、Taiwan、Korea IEEE ISPSD 2026 Program Book（PDF）

AdCom の構成ルール

AdCom members are the past ISPSD General Chairs.（担当年の4年前から observer として参加し、担当会議の開始時に member かつ AdCom Chair となる） Guidelines Rev. 7.0 [7] Membership / AdCom Chair ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

TPC の産学・地域バランス規定

Industry, academia, and national labs should be represented in fair proportion to the number of contributions from the respective category. / Each region (Japan, North America, Europe, and Other Area) should be represented in fair proportion to the number of contributions from the respective region. / There should be no more than two TPC members from the same affiliation Guidelines Rev. 7.0 [9] Membership の第2・3・7項 ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

2025 sponsor 一覧

Diamond Sponsors: DENSO CORPORATION、Infineon Technologies AG、MIRISE Technologies Corporation、Mitsubishi Electric Corporation / Gold Sponsors: Fuji Electric Co., Ltd.、Huawei Technologies Japan K.K.、ROHM Co., ltd.、Toshiba Electronic Devices & Storage Corporation、Nissin Ion Equipment Co., Ltd. / Silver Sponsors: SEKI DIAMOND SYSTEMS、Hitachi, Ltd.、Minebea Power Semiconductor Device Inc.、Resonac Corporation、Taiwan Semiconductor Manufacturing Company Limited 同ページにはこの3区分の下に「Sponsors」区分があり、AOI ELECTRONICS、Lam Research、Silvaco Japan など30社前後が別途並ぶ。いずれも当該回に協賛した事実の掲載である。 ISPSD 2025 Sponsors

2025 exhibitor 一覧

Silvaco Japan Co., Ltd.、Orbray Co., Ltd.、SEKI DIAMOND SYSTEMS、Nissin Ion Equipment Co., Ltd.、MPI Corporation、Nihon Synopsys G.K.、Lam Research Corporation、Novel Crystal Technology, Inc.、NuFlare Technology, Inc.、Mitsubishi Electric Corporation、MIRISE Technologies Corporation、Hitachi High-Tech Corporation、SCREEN Semiconductor Solutions Co., Ltd.、Sumitomo Metal Mining Co., Ltd. / SICOXS、Aehr Test Systems、Beneq Oy ほかを掲載 ISPSD 2025 Exhibitors

IEEE が全 proceedings の ISBN Catalog Number を受け取ると明記されているため、社内での引用管理では開催年ごとに版元表記が変わり得る。最終原稿の締切は著作権手続きの締切と同一日に設定されています。

掲載範囲

All papers accepted for presentation at the ISPSD should be published in a Conference Proceedings. This includes all invited, oral, and poster presentations. Guidelines Rev. 7.0 [6] Publications and Copyrights ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

著作権の帰属

The copyright of the Proceedings will be assigned to the IEEJ when the conference is held in Japan and to the IEEE when the conference is held in any location outside of Japan. Guidelines Rev. 7.0 [6] ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

ISBN と配布

The IEEE should receive the ISBN Catalog Number for all of the Proceedings so that they may be distributed to all libraries and other entities affiliated with the IEEE. Guidelines Rev. 7.0 [6] ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

2027 最終原稿と著作権手続き

Feb 19, 2027: Final submission deadline for final paper and copyright filing 最終原稿提出と著作権手続きが同一締切 IEEE ISPSD 2027 公式トップ

2026 publications 担当

Publications Chair: Andy Ritenour, Western Carolina University, USA 2026 Program の ORGANIZATION / ORGANIZING COMMITTEE IEEE ISPSD 2026 Program Book（PDF）

2027年の台湾開催は初めてとされ、地域ローテーションの「Other Areas」枠が新しい開催地に開かれていることを示します。表彰制度は2018年に Pioneer Award と Contributory Award を廃止し ISPSD Hall of Fame に一本化されました。

初回開催年

Since its first meeting in 1988, ISPSD has grown into the premier international forum for advances in power semiconductor devices and integrated circuits. ISPSD 2027 General Chair メッセージ本文。 IEEE ISPSD 2027 Message from the Chair

開催地ローテーション

The conference currently rotates each year among Japan (JP), North America (NA) Europe (EU) and Other Areas (OA) in a four-year cycle.（開催地と General Chair の承認は開催の2年以上前の AdCom 会合で決定） Guidelines Rev. 7.0 [8] Frequency and Location ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

2026 の北米回帰

After a four year international rotation, ISPSD will return to North America in the energetic city of Las Vegas, Nevada on May 24 – 28, 2026. IEEE ISPSD 2026 Program Book（PDF）

2027 の節目

This is the first time ISPSD is hosted in Taiwan, and we are truly delighted to welcome you here. It is a special milestone for us, and we are very excited to share this experience with the global ISPSD community. ISPSD 2027 General Chair メッセージ IEEE ISPSD 2027 Message from the Chair

表彰制度の変更

Starting in 2018, the Pioneer Award was discontinued in favor of the new ISPSD Hall of Fame recognition. / Starting in 2018, the Contributory Award was discontinued in favor of the new ISPSD Hall of Fame (IHF) recognition. Guidelines Rev. 7.0 [11] Awards ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

guidelines の改訂履歴

Rev. 0（A. Shibib, June 2012）から Rev. 7.0（K. Hamada, J. Shen ほか、April.12, 2022、ISPSD2021 の AdCom メンバーが承認）まで改訂履歴を明記。Rev. 7.0 で OA full status、diversity statement の追加、incoming AdCom chair プロセスの変更を実施 Guidelines Rev. 7.0 [2] Revision History ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

ISPSD Hall of Fame

The purpose of the IHF is to honor individuals who have made high impact contributions in advancing power semiconductor technology and/or in sustaining the success of the ISPSD.（原則として年間の受賞者は2名まで、貢献が10年以上遡ることを想定） Guidelines Rev. 7.0 [11] The ISPSD Hall of Fame。受賞者一覧は 2025 公式サイトの ISPSD HALL OF FAME ページと 2026 Program に別途掲載 ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

一方で technical co-sponsorship に PELS・IAS・ECPE が並び、2026年の plenary は AI データセンターと建機・農機の電動化という応用側の演題でした。

2026 CFP における対象の線引き

投稿カテゴリは HV / LVT / ICD / GaN / SiC / PK の6つで、いずれも power semiconductor device、power IC、module・package を単位に定義されている First Call for Papers の Conference Submission Tracks IEEE ISPSD 2026 First Call for Papers（PDF）

回路・システム側との接点

ICD カテゴリの細目に「Gate driver circuit design including WBG power device applications」「Single chip inverters and converters」「Power SoC and passive component integration on a chip」を含む Guidelines Rev. 7.0 Appendix I の 3. Power IC design (ICD) ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

パワエレ系学会との協賛関係

technical co-sponsorship として IEEE Power Electronics Society (PELS)、IEEE Industry Application Society (IAS)、欧州開催では European Center for Power Electronics (ECPE) が挙げられている Guidelines Rev. 7.0 [4] Sponsorship ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

IEDM との運営上の接点

This meeting is preferably held during some related conference or workshop, for example the IEDM, of the year prior to the ISPSD meeting, in order to foster participation by all TPC members from every region. Guidelines Rev. 7.0 [9] Paper Selection Meeting。論文選考会合の開催時期に関する記述 ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

2026 plenary の登壇者所属

2026 の plenary は Dr. Ahmed Abou-Alfotouh（AMD, USA）「Power Delivery as the Limiting Factor in AI Systems: From Transistor Scaling to Rack-Scale Power Architecture」と、Dr. Brij Singh（John Deere, USA）「Power Electronics Systems for Heavy-Duty Off-Road Vehicles」の2件 IEEE ISPSD 2026 Program Book（PDF）

企業側は、TPC メンバー選出が過去10年の Accepted Paper Points（oral 2点・poster 1点）を所属単位で集計して行われると明記されている点が、自社の投稿実績を評価する具体的な指標になります。調査担当は short course の講義タイトルと plenary の応用領域を追うと、その年に業界が取り上げている論点が短時間で掴めます。

学生の扱い

Registration fees for student members should be about one half of the standard registration fee to encourage the attendance and participation of students. Students should be allowed to participate in all activities of the conference including panel discussions, receptions, and banquets. Guidelines Rev. 7.0 [5] Registration fees ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

2026 登録費（現地参加）

IEEE/IEEJ Member 750 USD（早期）/ 850 USD、Non-Member 850 USD / 950 USD、Student IEEE/IEEJ Member 400 USD / 500 USD、Student Non-Member 500 USD / 600 USD 金額は USD 表記 IEEE ISPSD 2026 Registration

2026 short course 登録費

IEEE/IEEJ Member 400 USD（早期）/ 450 USD、Non-Member 450 USD / 500 USD、Student IEEE/IEEJ Member 200 USD / 225 USD、Student Non-Member 250 USD / 275 USD 本会議登録とは別枠 IEEE ISPSD 2026 Registration

2026 早期登録期限とキャンセル規定

Early registration deadline: April 24, 2026 at 12PM PST。March 24, 2026 まで全額返金、March 25–April 23, 2026 は50%返金、April 24, 2026 以降は返金なし ページ冒頭には「Early registration closed April 29th*」という別表記もあり、注記に「Dates changed since first posting」とある IEEE ISPSD 2026 Registration

若手向け表彰

The Charitat Award should be awarded each year to a young researcher (age less than 30 at the time of the conference) who is both a first author and presenter of a paper determined to be best overall among all eligible papers. Paper eligibility should be indicated during the abstract submission process. Guidelines Rev. 7.0 [11] Awards ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

所属単位の投稿実績指標

Accepted paper points (APPs) for the past ten years are listed for each affiliation. APPs are 2 points for an oral paper and 1 point for a poster paper, respectively. Co-authors share points proportionately on an affiliation basis. Guidelines Rev. 7.0 Appendix III。TPC メンバー選出の前提として所属単位で集計される ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

TPC 在任年数の制限

Members should serve a maximum of five consecutive years on the TPC and then take a break of at least 2 years before being asked to re-join the TPC. Guidelines Rev. 7.0 [9] Membership 第8項 ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

2026 正式名称

The 38th International Symposium on Power Semiconductor Devices and ICs IEEE ISPSD 2026 First Call for Papers（PDF）

2027 正式名称・回次

the 39th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2027) IEEE ISPSD 2027 Message from the Chair

2025 正式名称・回次

The 37th International Symposium on Power Semiconductor Devices and ICs（フッターの Copyright 表記） title タグと見出しは「The 37h International Symposium on Power Semiconductor Devices and ICs - ISPSD2025」と誤植のままで、正しい「37th」はフッターにしか出てこない ISPSD 2025 公式トップ

開催頻度

The ISPSD is held once per year, typically in May or June. ISPSD Conference Guidelines Rev. 7.0 [8] Conference Operations / Frequency and Location ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

主催・技術協賛の原則

北米開催時は IEEE Electron Devices Society (EDS) が sponsorship、IEEE Power Electronics Society (PELS)・IEEE Industry Application Society (IAS)・IEE Japan (IEEJ) 等が technical co-sponsorship。日本開催時は IEEJ が sponsorship で EDS・PELS・IAS 等が technical co-sponsorship。欧州開催時は EDS が sponsorship で PELS・IAS・IEEJ・European Center for Power Electronics (ECPE) が technical co-sponsorship Guidelines Rev. 7.0 [4] Sponsorship。各年の最終決定はその年の Organizing Committee ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）

2025 の主催・共催（日本開催の実例）

Organized by The Institute of Electrical Engineers of Japan / Technical co-sponsors: IEEE, IEEE EDS, IEEE PELS, IEEE IAS 支援に JSPS KAKENHI（Grant Number 24HP0701）、NICT の International Exchange Program の記載あり ISPSD 2025 公式トップ

最高意思決定機関

This AdCom is the top decision-making organization of the ISPSD.（AdCom は会議地の承認、General Chair・Steering Committee Chair・TPC Chair の任命承認を担当） Guidelines Rev. 7.0 [7] Advisory Committee / Purpose ISPSD Conference Guidelines Rev. 7.0（公式規程 PDF）